Field effect transistors with varying threshold voltages
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United States of America Patent
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Jun 6, 2017
Grant Date -
May 28, 2015
app pub date -
Dec 4, 2014
filing date -
Jul 10, 2012
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Abstract
A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions of the first semiconductor device.
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