Semiconductor device and manufacturing method thereof
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United States of America Patent
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Jun 6, 2017
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app pub date -
Dec 14, 2015
filing date -
Jan 14, 2015
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Abstract
A method for manufacturing a semiconductor device is provided. The method comprises the steps of: providing a transparent substrate having a visible region and an invisible region; forming a gate and at least an alignment mark coplanarly on the transparent substrate, wherein the gate is located in the visible region and the alignment mark is located in the invisible region; forming a gate insulation layer to cover the gate and cover the alignment mark; forming an oxide semiconductor layer on the gate insulation layer above the gate; and forming an etching stop layer above the gate and the alignment mark.
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