Pedestal construction with low coefficient of thermal expansion top
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United States of America Patent
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Jun 6, 2017
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N/A
app pub date -
Mar 15, 2013
filing date -
Jul 3, 2012
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Abstract
A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly onto the application substrate, an insulation layer disposed onto the heater layer, and a second substrate disposed onto the insulation layer. The heater layer is directly disposed onto the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer.
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