Low power high speed program method for multi-time programmable memory device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 6, 2017
Issued Date -
N/A
app pub date -
Nov 30, 2016
filing date -
Sep 29, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A programming method for a PMOS multi-time programmable (MTP) flash memory device biases the select gate transistor to a constant drain current level and sweeps the control gate bias voltage from a low voltage level to a high voltage level while maintaining the cell current around a predetermined cell current limit level. In this manner, the PMOS MTP flash memory device can achieve low power and high speed program using hot carrier injection (HCI). The programming method of the present invention enables multi-bit programming of the PMOS MTP flash memory cells, thereby increasing the programming speed while preserving low power consumption.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully