Plasmonic mode III-V laser as on-chip light source
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United States of America Patent
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May 30, 2017
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May 18, 2017
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Nov 13, 2015
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Nov 13, 2015
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Abstract
A plasmonic light source includes a substrate and a square nano-cavity formed on the substrate. The nano-cavity includes a quantum well structure. The quantum well structure includes III-V materials. A plasmonic metal is formed as an electrode on the square nano-cavity and is configured to excite surface plasmons with the quantum well structure to generate light. Complementary metal oxide semiconductor (CMOS) devices are formed on the substrate.
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