Semiconductor light emitting diode chip with current extension layer and graphical current extension layers
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United States of America Patent
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May 30, 2017
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app pub date -
Mar 13, 2014
filing date -
Nov 25, 2013
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Abstract
A semiconductor light emitting diode chip relates to the field of production technologies of a light emitting diode. In the present invention, corresponding graphical current extension layers are respectively disposed below an N pad and a P pad, and in all light emitting compound areas, there is electronic compound light emitting. Compared with the prior art, an area of a light emitting compound area is increased, which can effectively improve current distribution and light emitting brightness of a chip. In addition, graphical current extension can effectively increase an adhesion of a pad on a surface and improve the reliability of a chip.
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