Vertical light emitting diode and fabrication method

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United States of America Patent

PATENT NO 9666757
SERIAL NO

14588001

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Abstract

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A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.

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Patent Owner(s)

Patent OwnerAddress
QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO LTDYUANQIAN VILLAGE SHIJING TOWN NANAN CITY QUANZHOU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Chih-Wei Xiamen, CN 102 662
Chen, Shunping Xiamen, CN 5 42
Lin, Daquan Xiamen, CN 3 4
Yang, Jianjian Xiamen, CN 6 13
Zeng, Xiaoqiang Xiamen, CN 30 119

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