Nitride semiconductor light emitting device and method of fabricating the same

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United States of America Patent

PATENT NO 9666753
APP PUB NO 20160308094A1
SERIAL NO

15094289

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A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.

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Patent OwnerAddress
MEIJO UNIVERSITY1-501 SHIOGAMAGUCHI TEMPAKU-KU NAGOYA-SHI AICHI 468-8502

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akasaki, Isamu Nagoya, JP 78 2193
Iwaya, Motoaki Nagoya, JP 33 164
Komori, Daisuke Nagoya, JP 3 0
Takarabe, Kaku Nagoya, JP 1 0
Takeuchi, Tetsuya Nagoya, JP 95 1201

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