Apparatuses and methods including a superjunction transistor
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United States of America Patent
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May 30, 2017
Grant Date -
Dec 10, 2015
app pub date -
May 15, 2015
filing date -
Jun 9, 2014
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Abstract
Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode.
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