POWER MOS TRANSISTOR DIE WITH TEMPERATURE SENSING FUNCTION AND INTEGRATED CIRCUIT
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United States of America Patent
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May 30, 2017
Grant Date -
Jun 15, 2017
app pub date -
Apr 8, 2016
filing date -
Dec 10, 2015
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Abstract
A power metal oxide semiconductor (MOS) transistor die with a temperature sensing function and an integrated circuit are provided. The power MOS transistor die has a control terminal, a phase terminal, a ground terminal and a temperature signal output terminal, and that further includes a power switch part and a temperature sensing part. The power switch part has: a first electrode coupled to the control terminal; a second electrode coupled to the ground terminal; and a third electrode coupled to the phase terminal. The temperature sensing part has: a first electrode; a second electrode coupled to the temperature signal output terminal; and a third electrode coupled to the third electrode of the power switch part. The power switch part and the temperature sensing part are configured as a MOS transistor made by a same manufacturing process, and are capable of sensing temperature precisely.
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