Plasma processing apparatus
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 30, 2017
Grant Date -
Apr 9, 2015
app pub date -
Oct 8, 2014
filing date -
Oct 9, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In a plasma processing apparatus, when pulse-modulating the high frequency power RF1 for plasma generation and the high frequency power RF2 for ion attraction with a first pulse PS1 and a second pulse PS2 having different frequencies, respectively, an impedance sensor 96A in a matching device 40 of a plasma generation system calculates an average value (primary moving average value ma) of an load impedance on a high frequency transmission line 43 for each cycle of the second pulse PS2 having a lower frequency, and outputs a load impedance measurement value based on those average values of the load impedance. Then, a matching controller 94A controls reactances of reactance elements XH1 and XH2 within a matching circuit 88A such that the load impedance measurement value is equal or approximate to a matching point (50Ω).
First Claim
Other Claims data not available
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 35 Citation Count
- C23C Class
- 97.03 % this patent is cited more than
- 8 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Nov 30, 2024 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 30, 2028 |
