Method of making a silicon nanowire device

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United States of America Patent

PATENT NO 9660026
SERIAL NO

15354196

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Abstract

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There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 μm in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation. The method, in examples, includes thinning the nanowire through iterative oxidation and etching of the oxidized portion.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA LLCP O BOX 5800 MS-0161 ALBUQUERQUE NM 87185

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Draper, Bruce L Albuquerque, US 7 224
Okandan, Murat Edgewood, US 79 1262
Resnick, Paul J Albuquerque, US 28 283

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