Thin-film thermistor element and method of manufacturing the same

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United States of America Patent

PATENT NO 9659691
SERIAL NO

14111932

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Abstract

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Provided is a thin-film thermistor element including a Si substrate 2, a thermistor thin film 5 formed on the Si substrate 2, and an electrode 3 made of platinum, an alloy thereof or the like and formed on, under or inside the thermistor thin film 5. The electrode 3 is formed from a film deposited containing oxygen and nitrogen and then crystallized by heat treatment.

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Patent Owner(s)

Patent OwnerAddress
SEMITEC CORPORATION7-7 KINSHI 1-CHOME SUMIDA-KU TOKYO 130-8512

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Kenji Tokyo, JP 273 3110
Toyoda, Tadashi Tokyo, JP 2 16

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