Single-crystal growth apparatus
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United States of America Patent
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May 23, 2017
Grant Date -
Dec 10, 2015
app pub date -
Dec 19, 2013
filing date -
Jan 23, 2013
priority date (Note) -
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Abstract
Disclosed is a single-crystal growth apparatus including a chamber, a crucible provided in the chamber and configured to accommodate a melt that is a raw material for single-crystal growth, a heater disposed between the crucible and a side wall of the chamber and heating the crucible, and a crucible screen disposed on an upper end of the crucible, and the crucible screen has a bending member reflecting a radiant heat generated from the melt in the crucible to inside wall of the crucible.
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