Semiconductor device
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United States of America Patent
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May 16, 2017
Grant Date -
Feb 25, 2016
app pub date -
Nov 4, 2015
filing date -
May 22, 2009
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.
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