CMOS image sensor and a method of forming the same
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United States of America Patent
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May 16, 2017
Grant Date -
N/A
app pub date -
Apr 8, 2016
filing date -
Apr 8, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A complementary metal-oxide-semiconductor (CMOS) image sensor includes an implant region of a second type formed in a crystalline layer of a first type. A channel of a transfer gate entirely covers the implant region, which partially joins a photodiode, a doped well and a floating diffusion node.
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International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 16, 2028 |