CMOS image sensor and a method of forming the same

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United States of America Patent

PATENT NO 9653513
SERIAL NO

15094888

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Abstract

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A complementary metal-oxide-semiconductor (CMOS) image sensor includes an implant region of a second type formed in a crystalline layer of a first type. A channel of a transfer gate entirely covers the implant region, which partially joins a photodiode, a doped well and a floating diffusion node.

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Patent Owner(s)

Patent OwnerAddress
HIMAX IMAGING LIMITEDNO 26 ZILIAN RD XINSHI DIST TAINAN CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheung, Desmond Tainan, TW 25 362
Kim, Kihong Tainan, TW 74 842
Patrick, Inna Tainan, TW 29 333
Wu, Yang Tainan, TW 169 708
Yu, Feixia Tainan, TW 4 14

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