Multi-beam writing of pattern areas of relaxed critical dimension
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United States of America Patent
Stats
-
May 16, 2017
Issued Date -
N/A
app pub date -
Mar 17, 2016
filing date -
Mar 17, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.
First Claim
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Family
International Classification(s)
- 2016 Application Filing Year
- H01J Class
- 2255 Applications Filed
- 1758 Patents Issued To-Date
- 77.97 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 13 Citation Count
- H01J Class
- 87.58 % this patent is cited more than
- 8 Age
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