Binary photomask blank, preparation thereof, and preparation of binary photomask

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United States of America Patent

PATENT NO 9651858
APP PUB NO 20160018729A1
SERIAL NO

14799358

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Abstract

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A binary photomask blank has a light-shielding film on a transparent substrate, the light-shielding film composed mainly of transition metal M and Si, or M, Si and N, and having an optical density of at least 3.0. The light-shielding film includes a layer containing M, Si and N so as to meet the formula: B≦0.68×A+0.23 wherein A is an atomic ratio M/Si and B is an atomic ratio N/Si, and has a thickness of up to 47 nm. The binary photomask blank has a thin light-shielding film capable of fully shielding exposure light.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTDTOKYO JAPAN TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inazuki, Yukio Joetsu, JP 113 794
Kosaka, Takuro Joetsu, JP 52 118
Nishikawa, Kazuhiro Joetsu, JP 142 1770

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