High-speed germanium PIN photodiode

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United States of America Patent

PATENT NO 9640702
SERIAL NO

15134784

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Abstract

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A diode is described which comprises a light-sensitive germanium region (5) located on a waveguide (2) made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide.

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Patent Owner(s)

Patent OwnerAddress
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIKIM TECHNOLOGIEPARK 25 FRANKFURT (ODER) 15236

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Knoll, Dieter Frankfurt, DE 19 354
Lischke, Stefan Frankfurt, DE 5 11

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