Method for producing the P-N junction of a thin-film photovoltaic cell and corresponding method for producing a photovoltaic cell

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United States of America Patent

PATENT NO 9640687
SERIAL NO

14892462

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A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

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COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESBAT LE PONANT 25 RUE LEBLANC PARIS 75015

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Altamura, Giovanni Grenoble, FR 3 2
Grenet, Louis Grenoble, FR 7 2
Perraud, Simon Bandol, FR 22 94
Roux, Frédéric Saint-Égrève, FR 6 19

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