Low-cost complementary BiCMOS integration scheme
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United States of America Patent
Stats
-
May 2, 2017
Issued Date -
N/A
app pub date -
Mar 17, 2015
filing date -
Apr 16, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device is disclosed. The BiCMOS device includes a CMOS device in a CMOS region, a first CMOS well in the CMOS region, an NPN bipolar device in a bipolar region, a second CMOS well in the bipolar region, the second CMOS well being a collector sinker and being electrically connected to a sub-collector of the NPN bipolar device, where the first CMOS well in the CMOS region and the second CMOS well in the bipolar region form a p-n junction to provide electrical isolation between the CMOS device and the NPN bipolar device. The BiCMOS device further includes a PNP bipolar device having a sub-collector, the sub-collector of the PNP bipolar device being electrically connected to a third CMOS well.
First Claim
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Family
International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 6 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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