Spin-on spacer materials for double- and triple-patterning lithography
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United States of America Patent
Stats
-
May 2, 2017
Issued Date -
N/A
app pub date -
Jan 5, 2010
filing date -
Jan 7, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.
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International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 7 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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