Bonded wafer structure having cavities with low pressure and method for forming

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United States of America Patent

PATENT NO 9637372
APP PUB NO 20160311676A1
SERIAL NO

14697081

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Abstract

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A multi-wafer structure is formed by forming a cavity in a cap wafer and forming a first seal material around the cavity. A collapsible standoff structure is formed around the cavity. A movable mass is formed in a device wafer. A second seal material is formed around the movable mass. The first seal material and the second seal material are of materials that are able to form a eutectic bond at a eutectic temperature. The cap wafer and the device wafer are arranged so that the first and second seals are aligned but separated by the collapsible standoff structure. Gas is evacuated from the cavity at a temperature above the eutectic temperature using a low pressure. The temperature is lowered, the cap and device wafer are pressed together, and the temperature is raised above the eutectic temperature to form a eutectic bond with the first and second seal materials.

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Patent Owner(s)

Patent OwnerAddress
NXP USA INC6501 WILLIAM CANNON DRIVE WEST AUSTIN TX 78735

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Geisberger, Aaron A Austin, US 33 194
Hanna, Jeffrey D Spicewood, US 2 4
Montez, Ruben B Cedar Park, US 21 108
Steimle, Robert F Austin, US 39 656

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