Complementary metal oxide heterojunction memory devices and methods related thereto

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United States of America Patent

PATENT NO 9634247
APP PUB NO 20140117298A1
SERIAL NO

13831935

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Abstract

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A resistive memory device is disclosed. The memory device comprises one or more metal oxide layers. An oxygen vacancy or ion concentrations of the one or more metal oxide layer is controlled in the formation and the operation of the memory device to provide robust memory operation.

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4D-S LTDC/- GROUND FLOOR BGC CENTRE 28 THE ESPLANADE PERTH 6000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Dongmin Saratoga, US 58 619
Cleveland, Lee Santa Clara, US 38 1238
Desu, Seshubabu Vestal, US 20 48
Pfluger, Kurt Monte Sereno, US 4 29
Yang-Scharlotta, Jean Glendale, US 4 29

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