Thin film transistor and manufacturing method thereof
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United States of America Patent
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Apr 25, 2017
Grant Date -
Nov 24, 2016
app pub date -
Jan 21, 2015
filing date -
Dec 30, 2014
priority date (Note) -
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Abstract
The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a first semiconductor layer, an etch stop layer and a second semiconductor layer stacked on a surface of the substrate, and a first via and a second via formed on the etch stop layer; a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively, wherein the source connects the first semiconductor layer through the first via, and the drain connects the first semiconductor layer through the second via, a gate insulation layer formed on the source and the drain; and a gate formed on the gate insulation layer. The thin film transistor of the disclosure have a higher on-state current of the thin film transistor and a faster switching speed.
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