Method for forming an electrical contact
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United States of America Patent
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Apr 25, 2017
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N/A
app pub date -
Dec 3, 2015
filing date -
Dec 8, 2014
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Abstract
A method for forming an electrical contact to a semiconductor structure is provided. The method includes providing a semiconductor structure, providing a metal on an area of said semiconductor structure, wherein said area exposes a semiconductor material and is at least a part of a contact region, converting said metal to a Si-comprising or a Ge-comprising alloy, thereby forming said electrical contact on said area, wherein said converting is done by performing a vapor-solid reaction, whereby said semiconductor structure including said metal is subjected to a silicon-comprising precursor gas or a germanium-comprising precursor gas.
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