Metal induced nanocrystallization of amorphous semiconductor quantum dots
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United States of America Patent
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Apr 25, 2017
Issued Date -
N/A
app pub date -
Mar 7, 2014
filing date -
Mar 13, 2013
priority date (Note) -
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Abstract
A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semi-conductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate.
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