Photodiode structures
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United States of America Patent
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Apr 18, 2017
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app pub date -
Sep 11, 2014
filing date -
Sep 11, 2014
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Abstract
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
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