Thermal doping of materials
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United States of America Patent
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Apr 11, 2017
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N/A
app pub date -
Nov 18, 2015
filing date -
Dec 10, 2013
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Abstract
A method is disclosed for doping a semiconductor material comprising the steps of providing a semiconductor material having a first and a second surface. A dopant precursor is applied on the first surface of the semiconductor material. A thermal energy beam is directed onto the second surface of the semiconductor material to pass through the semiconductor material and impinge upon the dopant precursor to dope the semiconductor material thereby.
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