Coherent spin field effect transistor
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United States of America Patent
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Apr 11, 2017
Grant Date -
Mar 31, 2016
app pub date -
Apr 3, 2015
filing date -
Jan 5, 2012
priority date (Note) -
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Abstract
A voltage switchable coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A chrome oxide layer is formed on the cobalt by MBE at room at UHV at room temperature. There was thin cobalt oxide interface between the chrome oxide and the cobalt. Other magnetic materials may be employed. A few ML field of graphene is deposited on the chrome oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.
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