Thin film transistor and manufacturing method thereof
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United States of America Patent
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Apr 11, 2017
Grant Date -
Nov 24, 2016
app pub date -
Jan 21, 2015
filing date -
Dec 30, 2014
priority date (Note) -
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Abstract
The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.
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