MIS contact structure with metal oxide conductor
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United States of America Patent
Stats
-
Apr 11, 2017
Issued Date -
N/A
app pub date -
Jun 17, 2016
filing date -
Jun 17, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10−5-10−7 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm−3 and less than approximately 10−8 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm−3.
First Claim
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International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 7 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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|---|---|---|---|---|
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