Method for patterning sub-50-nanometers structures
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United States of America Patent
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Apr 11, 2017
Grant Date -
Jun 2, 2016
app pub date -
Jul 11, 2014
filing date -
Jul 11, 2013
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Abstract
Sub-50-nm structures are formed using sequential top-down and bottom up lithographies in conjunction with selective etching. The preferred rendition of the method involves: (a) rough lithographic patterning, (b) size/shape selected nanostructure deposition, (c) resist reflow around the nanostructures, and (d) selective removal/etching of the nanostructure.
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