All around electrode for novel 3D RRAM applications
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United States of America Patent
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Apr 11, 2017
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Dec 18, 2013
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Jul 10, 2013
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Abstract
A resistive switching memory device can include three or more electrodes interfacing a switching layer, including a top electrode, a bottom electrode, and a side electrode. The top and bottom electrodes can be used for forming conductive filaments and for reading the memory device. The side electrode can be used to control the resistance state of the switching layer.
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