Voltage supply devices generating voltages applied to nonvolatile memory cells
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United States of America Patent
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Apr 11, 2017
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N/A
app pub date -
Jul 15, 2016
filing date -
Feb 12, 2016
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Abstract
A voltage supply device includes a bias generator, a control signal generator and a cell switching circuit. The bias generator divides a first supply voltage to output a plurality of divided supply voltages. The control signal generator receives the plurality of divided supply voltages to generate a plurality of control signals. The cell switching circuit receives the plurality of control signals to provide nonvolatile memory cells with one or more of a ground voltage, the first supply voltage, or a second supply voltage different from the first supply voltage. Each of the bias generator, the control signal generator and the cell switching circuit is implemented with medium voltage MOS transistors having a breakdown voltage of from approximately 7 volts to approximately 15 volts.
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