Susceptor
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United States of America Patent
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Apr 4, 2017
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N/A
app pub date -
Jul 1, 2005
filing date -
Jul 22, 2004
priority date (Note) -
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Abstract
The invention provides a susceptor capable of obtaining high-quality SiC semiconductor crystals by keeping the Si concentration and C concentration around a wafer constant and by preventing the generation of particles. A susceptor of graphite covered with silicon carbide is characterized in that at least one section of a part on which a wafer is placed is tantalum carbide or a graphite material covered with tantalum carbide. The part on which the wafer is placed may be a detachable member. A material around the part on which the wafer is placed may be a detachable graphite material covered with silicon carbide.
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