Methods for forming fins for metal oxide semiconductor device structures
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United States of America Patent
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Mar 28, 2017
Grant Date -
Jun 5, 2014
app pub date -
Dec 21, 2011
filing date -
Dec 21, 2011
priority date (Note) -
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Abstract
Methods are disclosed for forming fins in transistors. In one embodiment, a method of fabricating a device includes forming silicon fins on a substrate and forming a dielectric layer on the substrate and adjacent to the silicon fins such that an upper region of each silicon fin is exposed. Germanium may then be epitaxially grown germanium on the upper regions of the silicon fins to form germanium fins.
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