Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices
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United States of America Patent
Stats
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Mar 21, 2017
Grant Date -
Jul 7, 2016
app pub date -
Dec 31, 2015
filing date -
Nov 30, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.
First Claim
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International Classification(s)
- 2015 Application Filing Year
- H01S Class
- 1132 Applications Filed
- 964 Patents Issued To-Date
- 85.16 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 10 Citation Count
- H01S Class
- 21.26 % this patent is cited more than
- 8 Age
Maintenance Fees
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|---|---|---|---|---|
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