Semiconductor light-emitting element and method of manufacturing the same
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United States of America Patent
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Mar 21, 2017
Grant Date -
Jul 14, 2016
app pub date -
Aug 1, 2014
filing date -
Aug 9, 2013
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Abstract
A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.
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