Ultra-high pressure doping of materials
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United States of America Patent
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Mar 21, 2017
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Dec 8, 2014
filing date -
Dec 10, 2013
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Abstract
A method and apparatus is disclosed for doping a semiconductor substrate with a dopant concentration greater than 1020 atoms per cubic centimeter. The method is suitable for producing an improved doped wide bandgap wafer for power electronic devices, photo conductive semiconductor switch, or a semiconductor catalyst.
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