Method of manufacturing a fin-like field effect transistor (FinFET) device
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United States of America Patent
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Mar 21, 2017
Grant Date -
Jan 29, 2015
app pub date -
Jul 30, 2014
filing date -
Jul 15, 2010
priority date (Note) -
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Abstract
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed over a portion of the fin structure. The gate structure traverses the fin structure and separates a source region and a drain region of the fin structure, the source and drain region defining a channel therebetween. The source and drain region of the fin structure include a strained source and drain feature. The strained source feature and the strained drain feature each include: a first portion having a first width and a first depth; and a second portion disposed below the first portion, the second portion having a second width and a second depth. The first width is greater than the second width, and the first depth is less than the second depth.
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