Large aluminum nitride crystals with reduced defects and methods of making them
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United States of America Patent
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Mar 21, 2017
Issued Date -
N/A
app pub date -
Mar 25, 2016
filing date -
Nov 28, 2005
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
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International Classification(s)
- 2016 Application Filing Year
- B28D Class
- 153 Applications Filed
- 98 Patents Issued To-Date
- 64.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- B28D Class
- 28.57 % this patent is cited more than
- 8 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Sep 21, 2028 |
