Efficient dual metal contact formation for a semiconductor device
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United States of America Patent
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Mar 7, 2017
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Jun 4, 2015
filing date -
Jun 4, 2015
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Abstract
A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device includes depositing a dielectric layer on the n-type layer and the p-type layer. A pattern is formed in the dielectric layer, the pattern having a plurality of metal contact patterns for the semiconductor device. A first metal layer is deposited into the plurality of metal contact patterns, and a second metal layer is deposited directly on the first metal layer. External contacts for the semiconductor device are formed, where the external contacts include the second metal layer.
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