Crystalline multilayer structure and semiconductor device
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United States of America Patent
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Mar 7, 2017
Grant Date -
Nov 12, 2015
app pub date -
Dec 19, 2014
filing date -
May 8, 2014
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Abstract
Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.
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