Graphene base transistor and method for making the same

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United States of America Patent

PATENT NO 9590045
APP PUB NO 20160104778A1
SERIAL NO

14894090

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Abstract

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A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.

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Patent Owner(s)

Patent OwnerAddress
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIKIM TECHNOLOGIEPARK 25 FRANKFURT (ODER) 15236

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dabrowski, Jaroslaw Frankfurt, DE 9 86
Lippert, Gunther Frankfurt, DE 13 147
Lukosius, Mindaugas Frankfurt, DE 1 2
Lupina, Grzegorz Berlin, DE 7 63
Mehr, Wolfgang Friedersdorf, DE 5 34
Meliani, Chafik Berlin, DE 4 11
Wenger, Christian Berlin, DE 4 27
Wolff, Andre Frankfurt, DE 2 2

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