Integrated circuit structure with metal crack stop and methods of forming same
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United States of America Patent
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Mar 7, 2017
Grant Date -
Mar 2, 2017
app pub date -
Aug 27, 2015
filing date -
Aug 27, 2015
priority date (Note) -
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Abstract
Embodiments of the present disclosure provide an integrated circuit (IC) structure with a metal crack stop and methods of forming the same. An IC structure according to embodiments of the present disclosure can include an insulator positioned over a substrate; a barrier film positioned over the insulator; an interlayer dielectric positioned over the barrier film; and a metal crack stop positioned over the substrate and laterally adjacent to each of the insulator, the barrier film, and the interlayer dielectric, wherein the metal crack stop includes a sidewall having a first recess therein, and wherein a horizontal interface between the barrier film and the interlayer dielectric intersects the sidewall of the metal crack stop.
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