MEMS variable capacitor with enhanced RF performance

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United States of America Patent

PATENT NO 9589731
APP PUB NO 20140340814A1
SERIAL NO

14240654

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Abstract

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In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.

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Patent Owner(s)

Patent OwnerAddress
CAVENDISH KINETICS INC2960 NORTH 1ST STREET SAN JOSE CA 95134

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gaddi, Roberto S-Hertogenbosch, NL 26 176
Joshi, Vikram Mountain View, US 88 3602
Knipe, Richard L McKinney, US 55 1559
Nagata, Toshiyuki Los Gatos, US 31 318
Unamuno, Anartz Dresden, DE 12 142
Van, Kampen Robertus Petrus S-Hertogenbosch, NL 43 282

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