Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof

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United States of America Patent

PATENT NO 9588419
APP PUB NO 20150331307A1
SERIAL NO

14810197

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Abstract

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Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A removing process is provided to form an absorber with a top surface lower than a top surface of the capping layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU 300-77 R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jeng-Horng Hsin-Chu, TW 137 3250
Lu, Yen-Cheng New Taipei, TW 85 1437
Shih, Chih-Tsung Hsin-Chu, TW 146 2276
Yen, Anthony Hsin-Chu, TW 157 3414
Yu, Shinn-Sheng Hsin-Chu, TW 132 3917

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