Method for manufacturing acoustic wave device
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United States of America Patent
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Feb 28, 2017
Grant Date -
Jan 31, 2013
app pub date -
Oct 3, 2012
filing date -
Mar 16, 2011
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Abstract
A method for manufacturing an acoustic wave device with an excellent frequency-temperature profile is performed such that the acoustic wave device produced includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a dielectric film mainly including Si and O and arranged on the piezoelectric substrate to cover the IDT electrode. The dielectric film is formed by sputtering in a sputtering gas containing H2O.
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