Tunable variable resistance memory device
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United States of America Patent
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Feb 28, 2017
Grant Date -
Dec 1, 2016
app pub date -
Jun 1, 2015
filing date -
Jun 1, 2015
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Abstract
A variable resistance memory device may include a first electrode and a second electrode. The device may further include a chalcogenide glass layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The device may also include a metal ion source structure between the chalcogenide glass layer and the second electrode. The device may include a buffer layer between the first electrode and the chalcogenide glass layer.
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